2SK3678-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
200304
Super FAP-G Series
F...
2SK3678-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
www.DataSheet4U.com Switching
regulators
UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 900 VDSX *5 900 ID ±9 ID(puls] ±36 VGS ±30 IAR *2 9 EAS *1 287.7 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25°C 2.02 Tc=25°C 270 Tch +150 -55 to +150 Tstg Unit V V A A V A mJ kV/µs kV/µs W
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=6.51mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *3 IF< = BVDSS, Tch < = 150°C *4 VDS< = -ID, -di/dt=50A/µs, Vcc < = 900V
°C °C *2 Tch < =150°C *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Ga...