Document
DATA SHEET
SILICON POWER TRANSISTOR
2SC4551
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4551 is a power transistor developed for high-speed
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PACKAGE DRAWING (UNIT: mm)
switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 2 A) VCE(sat) ≤ 0.3 V (IC = 6 A, IB = 0.3 A) • Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 100 60 7.0 10 20 5.0 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C
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* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15597EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan
©
2002 1998
2SC4551
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Collector to emitter voltage Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS) Conditions IC = 6.0 A, IB = 0.6 A, L = 1 mH IC = 6.0 A, IB1 = −IB2 = 0.6 A, VBE(OFF) = −1.5 V, L = 180 µH, clamped VCB = 60 V, IE = 0 VCE = 60 V, RBE = 50 Ω, Ta = 125°C VCE = 60 V, VBE(OFF) = −1.5 V VCE = 60 V, VBE(OFF) = −1.5 V, Ta = 125°C VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 1.0 A VCE = 2.0 V, IC = 2.0 A VCE = 2.0 V, IC = 6.0 A IC = 6.0 A, IB = 0.3 A IC = 8.0 A, IB = 0.4 A IC = 6.0 A, IB = 0.3 A IC = 8.0 A, IB = 0.4 A VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 1.0 A IC = 6.0 A, RL = 8.3 Ω, IB1 = −IB2 = 0.3 A, VCC ≅ 50 V Refer to the test circuit. Fall time tf 0.3 150 140 0.3 1.5 100 100 60 0.3 0.5 1.2 1.5 V V V V pF MHz 200 400 MIN. 60 60 TYP. MAX. Unit V V
Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current
ICBO ICER ICEX1 ICEX2
10 1.0 10 1.0
µA
mA
µA
mA
Emitter cutoff current www.DataSheet4U.com DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time
IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* Cob fT ton tstg
10
µA
µs µs µs
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current waveform
Collector current waveform
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Data Sheet D15597EJ2V0DS
2SC4551
TYPICAL CHARACTERISTICS (Ta = 25°C)
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• The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by.