C3886A

Huandong Electronics Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION ¡¤ With TO-3P(H)IS package ¡¤ High voltage ,high speed APPLICATIONS ¡¤ Horizontal deflection output for high resolution display www.DataSheet4U.com ¡¤ High speed switching regulator output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ¡¤ Absolute maximum ratings (Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 15 4 50 150 -55~150 ¡æ ¡æ V A A A W UNIT V V Huandong Electronics Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER CONDITIONS MIN 2SC3886A SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 600 V www.DataSheet4U.com VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 ¦Ì A hFE DC current gain IC=1A ; VCE=5V 8 15 fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 210...