Type
IPD12N03LB G IPU12N03LB G
IPS12N03LB G IPF12N03LB G
OptiMOS®2 Power-Transistor
Package Marking • Qualified accor...
Type
IPD12N03LB G IPU12N03LB G
IPS12N03LB G IPF12N03LB G
OptiMOS®2 Power-
Transistor
Package Marking Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM)
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Product Summary V DS R DS(on),max ID 30 11.6 30 V mΩ A
Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant
Type
IPD12N03LB G
IPS12N03LB G
IPF12N03LB G
IPU12N03LB G
Package Marking
PG-TO252-3-11 12N03LB
PG-TO251-3-11 12N03LB
PG-TO252-3-23 12N03LB
PG-TO251-3-1 12N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A
Rev. 1.5
page 1
2006-05-15
IPD12N03LB G IPU12N03LB G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB
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IPS12N03LB G IPF12N03LB G
Unit max.
Values typ.
R thJC R thJA minimal footprint 6 cm2 cooling area5)
-
-
2.9 75 50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise s...