Transys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulated Transistors
SOT-23-3L
2SA1162
FEATURES Power dissipat...
Transys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulated
Transistors
SOT-23-3L
2SA1162
FEATURES Power dissipation PCM
TRANSISTOR (
PNP)
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
w.DataSheet4U.com
: 150
mW (Tamb=25℃)
0. 025 0. 95¡ À
2. 80¡ À 0. 05 1. 60¡ À0. 05
Collector current : 150 mA ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat)
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, Ic=0.1mA, f=1KHZ, Rg=10KΩ
-50 -50 -5 -0.1 -0.1 70 400 -0.3
80 7
0. 35
2. 92¡ À0. 05
1. 9
µA µA
V MHz pF
fT
Cob
Noise figure
NF
10
dB
CLASSIFICATION OF hFE(1) Rank Range Marking O 70-140 SO Y 120-240 SY GR 200-400 SG
...