2SA1162

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z Low noise:NF=1dB(Typ),10dB(Max). Commplementary to 2SC2712. Small package. Production specification 2SA1162 Pb Lead-free www.DataSheet4U.com APPLICATIONS z General purpose application. SOT-23 ORDERING INFORMATION Type No. 2SA1162 Marking SO/SY/SG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -50 -50 -5 -150 150 -55~125 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC0092 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage www.DataSheet4U.com Emitter-base Production specification 2SA1162 MIN -50 -50 -5 -0.1 -0.1 70 400 -0.3 80 7 10 V MHz pF dB TYP MAX UNIT V V V μA μA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test conditions IC=-100μA,IE=0 IC=-1mA,IB=0 B breakdown voltage IE=-100μA,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-2mA IC=-100mA, IB=-10mA B Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure VCE=-10V, IC=-1mA VCB=-10V,IE=0,f=1MHz VCE=-6V,IC=0.1mA, ...