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POWER MOSFET. AP4407M Datasheet

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POWER MOSFET. AP4407M Datasheet






AP4407M MOSFET. Datasheet pdf. Equivalent




AP4407M MOSFET. Datasheet pdf. Equivalent





Part

AP4407M

Description

ENHANCEMENT MODE POWER MOSFET



Feature


AP4407M Advanced Power Electronics Corp . ▼ Simple Drive Requirement ▼ Low On-resistance www.DataSheet4U.com D D D D P-CHANNEL ENHANCEMENT MODE POWER MO SFET BVDSS RDS(ON) G -30V 14mΩ -10.7 A ▼ Fast Switching SO-8 S S S ID D escription The Advanced Power MOSFETs f rom APEC provide the designer with the best combination of fast switching, rug gedized device design, lo.
Manufacture

Advanced Power Electronics

Datasheet
Download AP4407M Datasheet


Advanced Power Electronics AP4407M

AP4407M; w on-resistance and cost-effectiveness. The SO-8 package is universally preferr ed for all commercial-industrial surfac e mount applications and suited for low voltage applications such as DC/DC con verters. D G S Absolute Maximum Rati ngs Symbol VDS VGS ID@TA=25℃ ID@TA=70 ℃ IDM PD@TA=25℃ TSTG TJ Parameter D rain-Source Voltage Gate-Source Voltage Continuous Drain Curren.


Advanced Power Electronics AP4407M

t Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 25 -10.7 - 8.6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Tota l Power Dissipation Linear Derating Fac tor Storage Temperature Range Operating Junction Temperature Range Thermal Da ta Symbol Rthj-amb Parameter Thermal Re sistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and s.


Advanced Power Electronics AP4407M

pecifications subject to change without notice 200728031 AP4407M Electrical C haracteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltag e Static Drain-Source On-Resistance2 T est Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.015 14 25 -3 -1 -25 ±100 45 - V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns .

Part

AP4407M

Description

ENHANCEMENT MODE POWER MOSFET



Feature


AP4407M Advanced Power Electronics Corp . ▼ Simple Drive Requirement ▼ Low On-resistance www.DataSheet4U.com D D D D P-CHANNEL ENHANCEMENT MODE POWER MO SFET BVDSS RDS(ON) G -30V 14mΩ -10.7 A ▼ Fast Switching SO-8 S S S ID D escription The Advanced Power MOSFETs f rom APEC provide the designer with the best combination of fast switching, rug gedized device design, lo.
Manufacture

Advanced Power Electronics

Datasheet
Download AP4407M Datasheet




 AP4407M
Advanced Power
Electronics Corp.
AP4407M
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
www.DataSheet4U.com
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
14mΩ
-10.7A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
-30
± 25
-10.7
-8.6
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
50
Unit
/W
Data and specifications subject to change without notice
200728031




 AP4407M
AP4407M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSheet4U.com
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A
VGS=-4.5V, ID=-5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-10V, ID=-10A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 25V
ID=-10A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=6.8Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-25V
f=1.0MHz
-30 -
-V
- -0.015 - V/
- - 14 mΩ
- - 25 mΩ
-1 - -3 V
- 13 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 28 45 nC
- 5.2 - nC
- 19.8 - nC
- 12 - ns
- 11 - ns
- 97 - ns
- 72 - ns
- 1960 3200 pF
- 590 - pF
- 465 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-2.0A, VGS=0V
IS=-10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 36 - ns
- 34 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad.




 AP4407M
42 T A =25 o C
36
30
-10V
-5.0V
-4.5V
-4.0V
24
18
www.DataSheet4U.com 12
6
V G =-3.0V
0
012
-V DS , Drain-to-Source Voltage (V)
3
Fig 1. Typical Output Characteristics
25
I D =-10A
T A =25 o C
20
15
10
3579
-V GS , Gate-to-Source Voltage (V)
11
Fig 3. On-Resistance v.s. Gate Voltage
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1
0.3 0.5 0.7 0.9 1.1 1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP4407M
40
36 T A =150 o C
32
28
-10V
-5.0V
-4.5V
-4.0V
24
20
16
12
V G =-3.0V
8
4
0
01122
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.80
1.60 I D =-10A
V GS = -10V
1.40
1.20
1.00
0.80
0.60
-50
0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature



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