ENHANCEMENT MODE POWER MOSFET
AP4418GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge
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N-CHANNEL ...
Description
AP4418GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge
www.DataSheet4U.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
35V 20mΩ 33A
▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4418GJ) is available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 35 ±20 33 21 100 34.7 0.28 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units ℃/W ℃/W
Data & specifications subject to change without notice
200511051-1/4
AP4418GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
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Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 35 1 -
Typ. 0.03 23 10 3 6 8 56 16 3 840 145 100 1.3
Max. Units 20 40 3 1 25 ±100 16 1340 2.1 V V/℃ mΩ mΩ V S...
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