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S5821 Dataheets PDF



Part Number S5821
Manufacturers Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor
Description (S5820 - S5822) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Datasheet S5821 DatasheetS5821 Datasheet (PDF)

BL GALAXY ELECTRICAL SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications www.DataSheet4U.com S5820 - - - S5822 VOLTAGE RANGE: 20 --- 40 V CURRENT: 3.0 A SMC(DO-214AB) The plastic material carries U/L recognition 94V-0 Case:JEDEC SMC,molded plastic Terminals: .

  S5821   S5821



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BL GALAXY ELECTRICAL SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications www.DataSheet4U.com S5820 - - - S5822 VOLTAGE RANGE: 20 --- 40 V CURRENT: 3.0 A SMC(DO-214AB) The plastic material carries U/L recognition 94V-0 Case:JEDEC SMC,molded plastic Terminals: Solderable per MIL- STD-202,method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.21 grams Mounting position: Any MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. S5820 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current @TL=90 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 @ 9.4A @TA=25 @TA=100 (Note2) (Note3) S5821 30 21 30 3.0 S5822 40 28 40 UNITS V V V A VRRM VRMS VDC IF(AV) 20 14 20 IFSM 0.475 0.85 80.0 0.50 0.90 2.0 20.0 250 20 - 55 ---- + 125 - 55 ---- + 150 0.525 0.95 A Maximum instantaneous forw ard voltage @ 3.0A (Note 1) Maximum reverse current at rated DC blocking voltage Typical junction capacitance Typical thermal resistance VF IR CJ RθJA TJ TSTG V mA pF /W Operating junction temperature range Storage temperature range NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient www.galaxycn.com Document Number 0281036 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES S5820 - - - S5822 FIG.1 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT PEAK FORWARD SURGE CURRENT AMPERES FIG.2 -- PEAK FORWARD SURGE CURRENT 80 70 60 50 40 30 20 10 4 3 www.DataSheet4U.com TJ=TJMAX 8.3ms Single Half Sine-Wave AMPERES 2 1 Resistive or Inductive Load 0.375"(9.5mm)Lead Length 0 0 25 50 75 100 125 150 175 1 10 100 LEAD TEMPERATURE, NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL INSTANTANEOUS FORWARD XXXXXXXXX----CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT FIG.4 -- TYPICAL JUNCTION CAPACITANCE 20 S5820 S5822 1000 CAPACITANCE, pF 10 T J =25¡æ f=1.0MHz Vsig=50mVp-p 100 AMPERES 1 S5821 T J= 2 5 P u ls e w id t h = 3 0 0 1 % D u t y C y c le s .1 .1 .3 .5 .7 .9 1 .1 1 .3 1 .5 1 .7 1 .9 2 .1 10 0.1 1 10 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0281036 BLGALAXY ELECTRICAL 2. .


AP4418GH S5821 S5822


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