AP4418GJ

AP4418GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 35V 20mΩ 33A ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4418GJ) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 35 ±20 33 21 100 34.7 0.28 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units ℃/W ℃/W Data & specifications subject to change without notice 200511051-1/4 AP4418GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj www.DataSheet4U.com Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 23 10 3 6 8 56 16 3 840 145 100 1.3 Max. Units 20 40 3 1 25 ±100 16 1340 2.1 V V/℃ mΩ mΩ V S...