AP4435D

AP4435D Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Fast Switching Speed ▼ PDIP-8 Package www.DataSheet4U.com G D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S S S -30V 20mΩ -9A PDIP-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 ±20 -9 - 5.8 - 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 201114031 AP4435D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 - Typ. -0.03 Max. Units 20 35 -3 -1 -25 ±100 42 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage ...