STL6NM60N

STL6NM60N N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT™ (5x5) ultra low gate charge MDmesh™ II Power MOSFET Features Type STL6NM60N VDSS @ TJMAX 650 V RDS(on) Max < 0.92 Ω ID 5.75 A(1) 1. The value is rated according Rthj-case ■ 100% avalanche tested www.DataSheet4U.com ■ ■ Low input capacitance and gate charge Low gate input resistance PowerFLAT (5x5) Application ■ Switching applications Figure 1. Internal schematic diagram Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking L6NM60N Package PowerFLAT™ (5x5) Packaging Tape & reel Order code STL6NM60N November 2007 Rev 3 1/12 www.st.com 12 Contents STL6NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...