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STPR1020CR Dataheets PDF



Part Number STPR1020CR
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description ULTRA-FAST RECOVERY RECTIFIER DIODES
Datasheet STPR1020CR DatasheetSTPR1020CR Datasheet (PDF)

® STPR1020CB/CG/CT/CF/CFP/CR ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES s A1 K 2x5A 200 V 150°C 0.99 V 30 ns A1 K A2 A2 A2 K A1 TO-220AB STPR1020CT TO-220FPAB STPR1020CFP K s s s s SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES: ISOWATT220AB / TO-220FPAB Insulation Voltage = 2000V DC Capacitance = 12 pF K A2 A1 K A2 A1 ISOWATT220AB STPR1020.

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® STPR1020CB/CG/CT/CF/CFP/CR ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES s A1 K 2x5A 200 V 150°C 0.99 V 30 ns A1 K A2 A2 A2 K A1 TO-220AB STPR1020CT TO-220FPAB STPR1020CFP K s s s s SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES: ISOWATT220AB / TO-220FPAB Insulation Voltage = 2000V DC Capacitance = 12 pF K A2 A1 K A2 A1 ISOWATT220AB STPR1020CF K DPAK STPR1020CB DESCRIPTION Dual center tap rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in DPAK, D2PAK, I2PAK, TO-220AB, TO-220FPAB or ISOWATT220AB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM (limiting values, per diode) Symbol VRRM IF(RMS) RMS forward current 2 A2 A1 K A1 A2 D2PAK STPR1020CG I2PAK STPR1020CR Parameter Repetitive peak reverse voltage D PAK / TO-220AB / ISOWATT220AB / TO-220FPAB / I2PAK DPAK 2 Value 200 10 7 Tc=125°C Tc=115°C Tc=110°C Per diode Per device Per device 5 10 10 50 - 65 to + 150 Unit V A A A IF(AV) Average forward D PAK / DPAK current TO-220AB / I2PAK δ = 0.5 ISOWATT220AB TO-220FPAB IFSM Tstg Surge non repetitive forward current Storage temperature range tp=10ms sinusoidal A °C 1/10 August 2002- Ed: 2E STPR1020CB/CG/CT/CF/CFP/CR THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D PAK / DPAK I2PAK ISOWATT220AB 2 Value Per diode Total Per diode Total 4.0 2.4 6.0 4.0 6.5 5 0.7 2.0 3.5 Unit °C/W TO-220FPAB Per diode Total Rth (c) Coupling TO-220AB / D2PAK / DPAK / I2PAK ISOWATT220AB TO-220FPAB When diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameters Reverse leakage current Forward voltage drop Test conditions Tj = 25°C VR = VRRM Tj = 100°C Tj = 125°C Tj = 125°C Tj = 25°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Min. Typ. Max. 50 0.6 0.99 1.20 1.25 Unit µA mA V IF = 5 A IF = 10 A IF = 10 A 0.8 0.95 To evaluate the conduction losses use the following equation : P = 0.78 x IF(AV) + 0.042 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr tfr VFP Test conditions IF = 0.5A IR = 1A IF = 1A VFR = 1.1 x VF max IF = 1A Min. Irr = 0.25A dIF/dt = 50 A/µs dIF/dt = 50 A/µs 20 3 Typ. Max. 30 Unit ns ns V Tj = 25°C Tj = 25°C Tj = 25°C 2/10 STPR1020CB/CG/CT/CF/CFP/CR Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode). PF(av)(W) 7 6 5 4 3 2 1 T IM(A) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 δ=1 IF(av) (A) tp δ=tp/T 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 50 45 40 35 30 25 20 15 10 5 0 0.0 T P=5W δ=tp/T tp P=7.5W P=10W P=2.5W δ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3-1: Average forward current versus ambient temperature (δ = 0.5, TO-220AB, DPAK, D2PAK). Fig. 3-2: Average forward current versus ambient temperature (δ = 0.5, ISOWATT220AB, TO-220FPAB). IF(av)(A) IF(av)(A) 6 Rth(j-a)=Rth(j-c) 6 5 4 3 2 1 0 δ=tp/T tp T Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) 5 ISOWATT220AB TO-220FP 4 3 2 Tamb(°C) T Rth(j-a)=15°C/W 1 100 125 150 0 25 50 75 0 δ=tp/T tp Tamb(°C) 50 75 100 125 150 0 25 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (TO-220AB, DPAK, D2PAK). Fig. 4-2: Non repetitive surge peak forward current versus overload duration (ISOWATT220AB). IM(A) 70 60 50 40 Tc=25°C IM(A) 60 50 40 30 20 Tc=25°C 30 20 IM Tc=125°C t IM 10 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 10 0 1E-3 Tc=100°C t δ=0.5 t(s) 1E-2 1E-1 1E+0 3/10 STPR1020CB/CG/CT/CF/CFP/CR Fig. 4-3: Non repetitive surge peak forward current versus overload duration (TO-220FPAB). Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (D2PAK, DPAK, TO-220AB). IM(A) 50 40 30 20 Tc=25°C K=[Zth(j-c)/Rth(j-c)] 1.0 δ = 0.5 δ = 0.2 δ = 0.1 T 10 IM t Tc=100°C δ=0.5 Single pulse t(s) 1E-2 1E-1 1E+0 0.1 1E-3 1E-2 t(s) 1E-1 0 1E-3 δ=tp/T tp 1E+0 Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AB, TO-220FPAB). Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). K=[Zth(j-c)/Rth(j-c)] 1.0 δ = 0.5 IFM(A) 50.0 10.0 Tj=125°C Tj=25°C δ = 0.2 δ = 0.1 1.0 Single pulse T t(s) 0.1 1E-2 1E-1 1E+0 δ=tp/T tp VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1E+1 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 50 40 30 F=1MHz Tj=25°C Fig. 8: Reverse recovery charges versus dIF/dt (per diode). Qrr(nC) 200 IF=IF(av) 90% confidence Tj=125°C 100 50 20 20 VR(V) 10 1 10 100 200 10 10 20 dIF/dt(A/µs) 50 100 200 500 4/10 STPR1020CB/CG/CT/CF/CFP/CR Fig. 9: Peak reverse recovery .


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