STPR1010CT

STPR1010CT thru STPR1020CT Ultra Fast Recovery Diodes Dimensions TO-220AB A C(TAB) A C A C A Dim. A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode www.DataSheet4U.com STPR1010CT STPR1020CT VRRM V 100 200 VRMS V 70 140 VDC V 100 200 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol I(AV) IFSM Characteristics Maximum Average Forward Rectified Current Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) Maximum Forward Voltage Pulse Width=300us Duty Cycle Maximum DC Reverse Current At Rated DC Blocking Voltage IF=5A IF=5A IF=10A IF=10A @TC=125oC TP=10ms TP=8.3ms @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=100oC Maximum Ratings 10 50 55 0.975 0.925 1.25 1.20 5 100 80 30 4.0 -55 to +150 Unit A A VF V IR CJ TRR ROJC uA pF ns o Typical Junction Capacitance Per Element (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forw...