300 NANOSECOND AT HIGH TEMPERATURE- FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES
HTDR-3
300 NANOSECOND AT 200 C HIGH TEMPERATURE- FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES
Exceptional high temperatur...
Description
HTDR-3
300 NANOSECOND AT 200 C HIGH TEMPERATURE- FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES
Exceptional high temperature Stability U up t o 20 0 OC Exceptionally low leakage Small size 3KV PRV
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Our proprietary diffusion and passivation process provides this unusual stability and no leakage drift at these elevated temperatures. All diodes are subjected to 10 temperature cycles from -55 C to + 200 C.
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EDI TYPE NO. HTDR- 3
PEAK REVERSE VOL TAGE 3,000
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DIMENSIONS See Fig.2
ELECTRICAL CHARACTERISTICS (at TA =25 C Unless Otherwise Specified)
Average Rectified Forward Current @ 50 C, IO O Average Rectified Forward Current @ 200 C, I O Max DC Reverse Current @ PRV @ 25 OC, I R Max DC Reverse Current @ PRV @ 200 C,I R
(See Note:1)
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50 mA 1 mA 0.1 A Max 30 A max 18 A typical 50ns.max at 25 OC 300ns.max at 200 OC
Max Reverse Recovery, Trr
(See Fig.1 and 3)
Max. Fwd. Voltage Drop at 25 C and 10ma ,VF Forward Stability Tj 200 C
Ambient Operating and Storage Temperature Range
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25 Max V (See Note 2)
-55 C to+200 C
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Note 1: IR at 200 C readings are taken in oil after voltage has been applied to device for 5 minutes. Note 2: All diodes are hot forward swept for forward stability to maximum temperature of 200 O C on dynamic display on curve trace oscilloscope. EDI reserves the right to change these specifications at any time without notice.
HTDR-3
Figure 1 REVERSE RECOVERY vs TEMPERATURE
300 250
MAX.
Tt rr (ns.) 200
150 100 50
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