B562

2SB562 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD468 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) REJ03G0646-0200 (Previous ADE-208-1024) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature 3 2 1 Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –1.0 –1.5 0.9 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB562 Electrical Characteristics Item Symbol Min Collector to base breakdown voltage V(BR)CBO –25 Collector to emitter breakdown voltage V(BR)CEO –20 Emitter to base breakdown voltage V(BR)EBO –5 Collector cutoff current DC current transfer ratio ICBO — hFE*1 85 Collector to emitter saturation voltage VCE(sat) — Base to emitter voltage VBE — Gain bandwidth product fT — Collector output capacitance Cob — Note: 1. The 2SB562 is grouped by hFE as follows. B C 85 to 170 120 to 240 Typ — — — — — –0.2 –0.8 350 38 Max — — — –1.0 240 –0.5 –1.0 — — Unit V V V µA V V MHz pF (Ta = 25°C) Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –2 V, IC = –0.5 A (Pulse test) IC = –0.8 A, IB = –0.08 A (Pulse test) VCE = –2 V, IC = –0.5 A (Pulse test) VCE = –2...