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CY7C1049BN Dataheets PDF



Part Number CY7C1049BN
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description 512K x 8 Static RAM
Datasheet CY7C1049BN DatasheetCY7C1049BN Datasheet (PDF)

512 K × 8 Static RAM Features ■ High speed ❐ tAA = 17 ns ■ Low active power ❐ 1073 mW (max.) ■ Low CMOS standby power ❐ 2.75 mW (max.) ■ 2.0 V data retention (400 W at 2.0 V retention) ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory expansion with CE and OE features Logic Block Diagram CY7C1049BN 512 K × 8 Static RAM Functional Description The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is.

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512 K × 8 Static RAM Features ■ High speed ❐ tAA = 17 ns ■ Low active power ❐ 1073 mW (max.) ■ Low CMOS standby power ❐ 2.75 mW (max.) ■ 2.0 V data retention (400 W at 2.0 V retention) ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory expansion with CE and OE features Logic Block Diagram CY7C1049BN 512 K × 8 Static RAM Functional Description The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these .


CY7C1049B CY7C1049BN CY7C1049BNV33


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