TS13003A

TS13003A High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 700V IC 2A VCE(SAT) 0.5V @ IC=1A, IB=0.25A Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Block Diagram Part No. Package TS13003ACK B0G TO-126 TS13003ACK C0G TO-126 Note: “G” denote for Halogen free Packing 1kpcs / Bulk 50pcs / Tube Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TC=25oC Operating Junction Temperature Operating Junction and Storage Temperature Range VCBO VCEO VEBO IC PTOT TJ TSTG Thermal Performance Parameter Symbol Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance RӨJA Limit 700 450 9 2 50 +150 - 55 to +150 Limit 2.5 96.2 Unit V V V A W oC oC Unit oC/W oC/W 1/5 Version: B14 TS13003A High Voltage NPN Transistor Electrical Specifications (TA=25oC unless otherwise noted) Parameter Conditions Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current IC = 1mA, IB = 0 IC = 1mA, VBE = 0V IC = 10mA, IE = 0 IE = 10mA, IC = 0 VCB = 700V, IE = 0 Collector-Emitter Cutoff Current VCE = 450V, IC = 0 Emitter-Base Cutoff Current VEB = 9V, IC = 0 Coll...