FJD5304D

FJD5304D High Voltage Fast Switching Transistor FJD5304D High Voltage Fast Switching Transistor Features Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time www.DataSheet4U.com Suitable for Electronic Ballast Application Equivalent Circuit C B 1 D-PACK E 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) TC = 25°C unless otherwise noted Parameter Value 700 400 12 4 8 2 4 30 150 -55 ~ 150 Units V V V A A A A W °C °C Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking J5304D J5304D Device FJD5304DTM FJD5304DTF Package D-PAK D-PAK Reel Size 13” Dia 13” Dia Tape Width - Quantity 2500 2000 ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJD5304D Rev. A FJD5304D High Voltage Fast Switching Transistor Electrical Characteristics Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE www.DataSheet4U.com VCE(sat) TC = 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Vol...