UTC PCR406
DESCRIPTION
The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. ...
UTC PCR406
DESCRIPTION
The UTC PCR406 silicon controlled rectifiers are high performance planner diffused P
NPN devices. These parts are intended for low cost high volume applications.
SCR
www.DataSheet4U.com
1
TO-92
1:CATHODE
2:GATE
3:ANODE
ABSOLUTE MAXIMUM RATINGS
PARAMETERS
Repetitive Peak Off-State Voltage PCR406-6 PCR406-5 On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature
SYMBOL
VDRM
TEST CONDITION
Tj=40 to 125°C (RGK =1kΩ) Tc=40°C Half Cycle=180, Tc=40°C IGR=10uA 10us Max. 20ms Max.
RATING
400 300 0.8 0.5 1 0.1 150 -40~125 -40~125 250
UNITS
V A A V A mW °C °C °C
IT(RMS) IT(AV) VGRM IGM PG(AV) Tj TSTG TSLD
1.6mm from case 10s Max.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Off state leakage current Off state leakage current On state voltage On state threshold voltage On state slops resistance Gate trigger current Gate trigger voltage Holding current Latching current Critical rate of voltage rise
SYMBOL
IDRM IDRM
TEST CONDITIONS
VDRM(RGK=1KΩ), Tj=125°C VDRM(RGK=1KΩ), Tj=25°C IT=0.4A IT=0.8A Tj=125°C Tj=125°C VD=7V VD=7V RGK=1KΩ RGK=1KΩ VD=0.67*VDRM(RGK=1KΩ), Tj=125°C
MIN
MAX
0.1 1.0 1. 4 2.2 0.95 600 200 0.8 5 6
UNIT
mA µA V V m µA V mA mA V/µs
VT VT(TO) Rt IGT VGT IH IL DV/DT
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R301-010,A
UTC PCR406
PARAMETER
Critical rate of current rise Gate controlled delay tim...