05N03LAG

IPD05N03LA G IPS05N03LA G IPF05N03LA G IPU05N03LA G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target application N-channel, logic level Excellent gate charge x R DS(on) product (FOM) www.DataSheet4U.com Product Summary V DS R DS(on),max (SMD version) ID 25 5.1 50 V mΩ A Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant Type Type IPD05N03LA IPF05N03LA IPS05N03LA Package IPU05N03LA Marking IPD05N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO252-3-11 P-TO251-3-11 05N03LA P-TO251-3-21 IPF05N03LA Ordering Code Q67042-S4144 Q67042-S P-TO252-3-23 Q67042-S 05N03LA Q67042-S4230 IPS05N03LA Marking 05N03LA 05N03LA 05N03LA P-TO251-3-11 05N03LA 05N03LA IPU05N03LA P-TO251-3-1 05N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=45 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 350 300 6 ±20 94 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 2.0 page 1 2006-05-11 IPD05N03LA G IPS05N03LA G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case...