W20NC50 Datasheet: STW20NC50





W20NC50 STW20NC50 Datasheet

Part Number W20NC50
Description STW20NC50
Manufacture STMicroelectronics
Total Page 8 Pages
PDF Download Download W20NC50 Datasheet PDF

Features: N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE STW20NC50 ww w.DataSheet4U.com s TYPICAL s s s s ST W20NC50 VDSS 500V RDS(on) < 0.27Ω ID 18.4A RDS(on) = 0.22Ω EXTREMELY H IGH dv/dt CAPABILITY 100% AVALANCHE TES TED NEW HIGH VOLTAGE BENCHMARK GATE CHA RGE MINIMIZED 2 1 3 DESCRIPTION The P owerMESH™II is the evolution of the f irst generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit wh ile keeping the device at the leading e dge for what concerns swithing speed, g ate charge and ruggedness. TO-247 INT ERNAL SCHEMATIC DIAGRAM APPLICATIONS S WITH MODE LOW POWER SUPPLIES (SMPS) s H IGH CURRENT, HIGH SPEED SWITCHING s DC- AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOT OR DRIVES s ABSOLUTE MAXIMUM RATINGS S ymbol VDS VDGR VGS ID ID IDM (q) PTOT d v/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (R GS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Dra.

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STW20NC50
N-CHANNEL 500V - 0.22- 18.4A TO-247
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STW20NC50
500V < 0.2718.4A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.22
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE LOW POWER SUPPLIES
(SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
500
500
±30
18.4
11.6
73.6
220
1.75
2
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD 18.4A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
1/8

                    
  






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