2SC5855. C5855 Datasheet

C5855 Datasheet PDF


Part

C5855

Description

2SC5855

Manufacture

Toshiba Semiconductor

Page 5 Pages
Datasheet
Download C5855 Datasheet


C5855 Datasheet
2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
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High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1500 V
: VCE (sat) = 3 V (max)
: tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1500
700
5
10
20
5
50
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 6 A
VCE = 5 V, IC = 8 A
IC = 8 A, IB = 2 A
IC = 8 A, IB = 2 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 6 , IB1 (end) = 0.8 A
fH = 32 kHz
ICP = 5.5 A, IB1 (end) = 0.8 A
fH = 80 kHz
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
700
V
28 60
6.2 10
4.3 6.7
――
3
V
1.0 1.4
V
2 MHz
120
pF
2.8
0.2
µs
2.3
0.1
µs
1 2004-5-18

C5855 Datasheet
IC – VCE
10
2.5
1.0 1.2
1.4 1.6 1.8
2.0
8
6
4
0.8
0.6
0.4
IB = 0.2 A
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2
0
0
Common emitter
Tc = 25
2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Tc = 100°C
hFE – IC
25
25
10
Common emitter
VCE = 5 V
1
0.01
0.1
1
Collector current IC (A)
10
10
Common emitter
VCE = 5 V
8
IC – VBE
6
Tc = 100°C
4
25
2
25
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
2
2SC5855
2004-5-18


Features Datasheet pdf 2SC5855 TOSHIBA TRANSISTOR SILICON NPN T RIPLE DIFFUSED MESA TYPE 2SC5855 HORIZ ONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL T V HIGH SPEED SWITCHING APPLICATIONS Hig h Voltage Low Saturation Voltage www.Da taSheet4U.com High Speed Unit: mm : V CBO = 1500 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (typ.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector Base Voltage Collector−Emitter Volt age Emitter−Base Voltage Collector Cu rrent Base Current Collector Power Diss ipation Junction Temperature Storage Te mperature Range DC Pulse SYMBOL VCBO VC EO VEBO IC ICP IB PC Tj Tstg RATING 150 0 700 5 10 20 5 50 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16E3A Weight: 5.5 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25° C) CHARACTERISTIC Collector Cut−off C urrent Emitter Cut−off Current Collec tor − Emitter Breakdown Voltage SYMBO L ICBO IEBO V (BR) CEO hFE (1) DC Curre nt Gain hFE (2) hFE (3) Collector−Emitter Saturation Voltage Base−Emitter Saturation V.
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