BR24L04F-W. 24L04F-W Datasheet

24L04F-W Datasheet PDF


Part

24L04F-W

Description

BR24L04F-W

Manufacture

Rohm

Page 26 Pages
Datasheet
Download 24L04F-W Datasheet


24L04F-W Datasheet
Memory ICs
BR24L04-W / BR24L04F-W / BR24L04FJ-W
BR24L04FV-W / BR24L04FVM-W
512×8 bit electrically erasable PROM
BR24L04-W / BR24L04F-W / BR24L04FJ-W /
BR24L04FV-W / BR24L04FVM-W
The BR24L04-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable.
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I2C BUS is a registered trademark of Philips.
zApplications
General purpose
zFeatures
1) 512 registers × 8 bits serial architecture.
2) Single power supply (1.8V to 5.5V).
3) Two wire serial interface.
4) Self-timed write cycle with automatic erase.
5) 16byte Page Write mode.
6) Low power consumption.
Write (5V) : 1.2mA (Typ.)
Read (5V) : 0.2mA (Typ.)
Standby (5V) : 0.1µA (Typ.)
7) DATA security
Write protect feature (WP pin).
Inhibit to WRITE at low VCC.
8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8
9) High reliability EEPROM with Double-Cell structure
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCLSDA for noise suppression.
14) Initial data FFh in all address.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Supply voltage
VCC 0.3 to +6.5
800(DIP8) 1
450(SOP8) 2
Power dissipation
Pd 450(SOP-J8) 2
300(SSOP-B8) 3
310(MSOP8) 4
Storage temperature
Tstg
65 to +125
Operating temperature
Topr
40 to +85
Terminal voltage
− −0.3 to VCC+0.3
1 Reduced by 8.0mW for each increase in Ta of 1°C over 25°C.
2 Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.
3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
4 Reduced by 3.1mW for each increase in Ta of 1°C over 25°C.
Unit
V
mW
°C
°C
V
1/25

24L04F-W Datasheet
Memory ICs
BR24L04-W / BR24L04F-W / BR24L04FJ-W
BR24L04FV-W / BR24L04FVM-W
zRecommended operating conditions (Ta=25°C)
Parameter
Supply voltage
Input voltage
Symbol
VCC
VIN
Limits
1.8 to 5.5
0 to VCC
Unit
V
V
zDC operating characteristics (Unless otherwise specified Ta=−40 to 85°C, VCC=1.8 to 5.5V)
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Parameter
"HIGH" input volatge 1
"LOW" input volatge 1
"HIGH" input volatge 2
"LOW" input volatge 2
"LOW" output current 1
"LOW" output current 2
Input leakage current
Output leakage current
Symbol
VIH1
VIL1
VIH2
VIL2
VOL1
VOL2
ILI
ILO
Min.
0.7VCC
0.8VCC
1
1
Typ.
Max.
0.3VCC
0.2VCC
0.4
0.2
1
1
Unit
V
V
V
V
V
V
µA
µA
Conditions
2.5VVCC5.5V
2.5VVCC5.5V
1.8VVCC<2.5V
1.8VVCC<2.5V
IOL=3.0mA, 2.5VVCC5.5V, (SDA)
IOL=0.7mA, 1.8VVCC5.5V, (SDA)
VIN=0V to VCC
VOUT=0V to VCC
Operating current
ICC1 − −
ICC2 − −
Standby current
ISB − −
This product is not designed for protection against radioactive rays.
2.0
mA
VCC=5.5V, fSCL=400kHz, tWR=5ms,
Byte Write, Page Write
VCC=5.5V, fSCL=400kHz
0.5 mA Random Read, Current Read,
Sequential Read
2.0
µA
VCC=5.5V, SDASCL=VCC,
A0, A1, A2=GND, WP=GND
2/25


Features Datasheet pdf Memory ICs BR24L04-W / BR24L04F-W / BR2 4L04FJ-W BR24L04FV-W / BR24L04FVM-W 51 2×8 bit electrically erasable PROM BR2 4L04-W / BR24L04F-W / BR24L04FJ-W / BR2 4L04FV-W / BR24L04FVM-W www.DataSheet4U .com The BR24L04-W series is 2-wire (I 2C BUS type) serial EEPROMs which are e lectrically programmable. ∗ I C BUS i s a registered trademark of Philips. 2 zApplications General purpose zFeature s 1) 512 registers × 8 bits serial arc hitecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface . 4) Self-timed write cycle with automa tic erase. 5) 16byte Page Write mode. 6 ) Low power consumption. Write (5V) : 1 .2mA (Typ.) Read (5V) : 0.2mA (Typ.) St andby (5V) : 0.1µA (Typ.) 7) DATA secu rity Write protect feature (WP pin). In hibit to WRITE at low VCC. 8) Small pac kage - - - DIP8 / SOP8 / SOP-J8 / SSOP- B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure 10) High rel iability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : .
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