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RN4Z

Galaxy Semi-Conductor

HIGH EFFICIENCY RECTIFIER

BLGALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capabi...


Galaxy Semi-Conductor

RN4Z

File Download Download RN4Z Datasheet


Description
BLGALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents www.DataSheet4U.com The plastic material carries U/L recognition 94V-0 RN4Z(Z) VOLTAGE RANGE: 200 V CURRENT: 3.5 A DO - 27 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RN4Z Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 UNITS VRRM VRMS VDC IF(AV) 200 140 200 3.5 A V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 120.0 A Maximum instantaneous forw ard voltage @ 3.5 A Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance @TA=25 @TA=100 (Note1) (Note2) (Note2) VF IR trr CJ RθJA TJ TSTG 0.92 50.0 1000.0 50 70 30 - 55 ---- + 150 - 55 ---- + 150 V A ns pF Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com ...




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