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RU4A Dataheets PDF



Part Number RU4A
Manufacturers Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor
Description HIGH EFFICIENCY ECTIFIERS
Datasheet RU4A DatasheetRU4A Datasheet (PDF)

BL FEATURES Low cost GALAXY ELECTRICAL RU4Y(Z) --- RU4YX(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.5 -- 4.0 A HIGH EFFICIENCY ECTIFIERS DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents www.DataSheet4U.com The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denot.

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BL FEATURES Low cost GALAXY ELECTRICAL RU4Y(Z) --- RU4YX(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.5 -- 4.0 A HIGH EFFICIENCY ECTIFIERS DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents www.DataSheet4U.com The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RU4Y Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ IF=IF(AV) Maximum reverse current @TA=25 (Note1) (Note2) (Note3) at rated DC blocking voltage @TA=100 Maximum reverse recovery time Typical junction capacitance Typical thermal resistance @TA=75 RU4Z 200 140 200 RU4 400 280 400 RU4A 600 420 600 3.0 RU4B 800 560 800 RU4C 1000 700 1000 2.5 RU4YX UNITS 100 70 100 4.0 V V V A VRRM VRMS VDC IF(AV) 100 70 100 3.5 IFSM VF IR trr CJ RθJL TJ TSTG 70.0 50.0 100.0 A 1.3 10.0 300.0 1.5 1.6 50.0 500.0 0.85 10.0 4) V A ns pF 300.0 50 100 70 8 - 55 ----- + 150 - 55 ----- + 150 50 Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. 4.IF(AV)=2.0A Document Number 0262048 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES RU4Y(Z)---RU4YX(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. (+) 25VDC (approx) (-) 1 NONINDUCTIVE (-) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) (-) 0 -0.25A -1 .0A 1cm www.DataSheet4U.com NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 100 RU4YX 10 RU4Y,RU4Z FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT 4.0 RU4YX RU4,RU4A,RU4B RU4C 3.0 RU4B 1.0 RU4Y,RU4Z 2.0 AMPERES RU4,RU4A 0.1 0.04 T J =25 Pulse Width=300 µ S 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 RU4C 1.0 Single Phase Half W ave 60Hz Resistive or Inductive Load 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, FIG.4 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT FIG.5--TYPICAL JUNCTION CAPACITANCE 90 80 70 60 RU4YX TJ=25 8.3ms Single Half Sine-Wave JUNCTION CAPACITANCE,pF 100 200 AMPERES 50 40 30 20 10 0 1 5 RU4,RU4A, RU4B,RU4C RU4Y,RU4Z,RU4 100 70 50 TJ=25 20 10 0.1 0.2 0.4 1 2 RU4Y,RU4Z RU4A,RU4B, RU4C,RU4YX 4 10 20 40 100 10 50 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0262048 BLGALAXY ELECTRICAL 2. .


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