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RU4C

Galaxy Semi-Conductor

HIGH EFFICIENCY ECTIFIERS

BL FEATURES Low cost GALAXY ELECTRICAL RU4Y(Z) --- RU4YX(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.5 -- 4.0 A HIGH ...


Galaxy Semi-Conductor

RU4C

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Description
BL FEATURES Low cost GALAXY ELECTRICAL RU4Y(Z) --- RU4YX(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.5 -- 4.0 A HIGH EFFICIENCY ECTIFIERS DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents www.DataSheet4U.com The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RU4Y Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ IF=IF(AV) Maximum reverse current @TA=25 (Note1) (Note2) (Note3) at rated DC blocking voltage @TA=100 Maximum reverse recovery time Typical junction capacitance Typical thermal resistance @TA=75 RU4Z 200 140 200 RU4 400 280 400 RU4A 600 420 600 3.0 RU4B 800 560 800 RU4C 1000 700 1000 2.5 RU4YX UNITS 100 70 100 4.0 V V V A VRRM VRMS VDC IF(AV) 100 70 100 3.5 IFSM VF IR trr CJ RθJL TJ TSTG 70.0 50.0 100.0 A 1.3 10.0 300.0 1.5...




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