DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5604
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LE...
DATA SHEET
NPN SILICON RF
TRANSISTOR
2SC5604
NPN SILICON RF
TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD
FEATURES www.DataSheet4U.com
High-gain
transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted 3-pin lead-less minimold package (1005 PKG)
ORDERING INFORMATION
Part Number 2SC5604 2SC5604-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form 8 mm wide embossed taping Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 15 6.0 2.0 35 140 150 −65 to +150
Unit V V V mA mW °C °C
Tj Tstg
2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.
Document No. PU10046EJ02V0DS (2nd...