UPF1010

UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB operation. Industry standard package. Low intermodulation distortion of–30dBc at 10W (PEP). www.DataSheet4U.com Gold Metalization, Gold Bond Wires, Gold-Plated Packages. 4 Package Type 440095 UPF1010F Package Type 440109 UPF1010P 4-1 UPF1010 Maximum Ratings Rating Drain to Source Voltage, gate connected to source www.DataSheet4U.com Gate to Source Voltage Total Device Dissipation @ Tcase = 70°C Derate above 70°C Symbol VDSS VGS PD TSTG TJ Value 65 +/- 20 Unit Volts Volts Watts W/°C °C °C 20 0.2 -65 to +150 200 4 Storage Temperature Range Operating Junction Temperature Thermal Characteristics Characteristics Thermal Resistance, Junction to Case Symbol ΘJC Maximum 3.6, 3.2 Unit °C/W Electrical DC Characteristics (TC=25°C unless otherwise specified) Rating Drain to Source Voltage, gate connected to source (VGS=0, IDS=1mA) Drain to Source Leakage current (VDS=28V, VGS=0) Gate to Source Leakage current (VGS=20V, VDS=0) Threshold Voltage (VDS=10V, IDS=1mA) Gate Quiescent Voltage (VDS=26 V, IDS=95mA) Drain to Source On Voltage (VDS=10V, IDS=1A) Forward Transconductance (VDS=10V, ID=0.5A) Symbol BVDSS IDSS IGSS VTH VGS(on) VDS(on) GM Min 65 2.0 3.0 - Typ 3.0 4.0 0...