2SA1837. A1837 Datasheet

A1837 2SA1837. Datasheet pdf. Equivalent

Part A1837
Description 2SA1837
Feature TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Ampl.
Manufacture Toshiba Semiconductor
Datasheet
Download A1837 Datasheet

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power A1837 Datasheet
Recommendation Recommendation Datasheet A1837 Datasheet




A1837
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1837
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1837
Unit: mm
High transition frequency: fT = 70 MHz (typ.)
Complementary to 2SC4793
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
230
230
5
1
0.1
2.0
20
150
55 to 150
Electrical Characteristics (Tc = 25°C)
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE
fT
Cob
VCB = 230 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 100 mA
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
VCE = 10 V, IC = 100 mA
VCB = 10 V, IC = 0, f = 1 MHz
Min Typ. Max Unit
― ― −1.0 µA
― ― −1.0 µA
230
V
100 320
― −1.5
V
― −1.0
V
70 MHz
30 pF
Marking
A1837
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26



A1837
1.0
0.8
0.6
0.4
0.2
0
0
IC – VCE
20 10
8
6
4
IB = 2 mA
Common emitter
Tc = 25°C
2 4 6 8
Collector-emitter voltage VCE (V)
10
2SA1837
IC – VBE
1.0
Common emitter
0.8 VCE = 5 V
0.6
Tc = 100°C
25
25
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 5 V
Tc = 100°C
25
25
10
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
VCE (sat) – IC
3
Common emitter
IC/IB = 10
1
0.5
0.3
0.1
0.05
0.03
Tc = 100°C
25 25
0.01
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
500
300 Common emitter
VCE = 10 V
Tc = 25°C
100
fT – IC
50
30
10
5 10
30
100
300
Collector current IC (mA)
1000
Safe Operating Area
5
3
IC max (pulsed)*
1 IC max (continuous)
1 ms*
10 ms*
100 ms*
0.5
DC operation
0.3
0.1
0.05
0.03
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
1
3
10
30
100
300
Collector-emitter voltage VCE (V)
2 2004-07-26





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