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MT8VDDT6464HD

Micron Semiconductor Products

(MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms

128MB, 256MB, 512MB (x64) 200-PIN DDR SODIMM SMALL-OUTLINE DDR SDRAM MODULE Features • 200-pin, small-outline, dual in-...


Micron Semiconductor Products

MT8VDDT6464HD

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Description
128MB, 256MB, 512MB (x64) 200-PIN DDR SODIMM SMALL-OUTLINE DDR SDRAM MODULE Features 200-pin, small-outline, dual in-line memory module (SODIMM) Fast data transfer rates PC1600, PC2100, or PC2700 www.DataSheet4U.com Utilizes 200 MT/s, 266 MT/s, and 333MT/s DDR SDRAM components 128MB (16 Meg x 64), 256MB (32 Meg x 64), or 512MB (64 Meg x 64) VDD = VDDQ = +2.5V VDDSPD = +2.3V to +3.6V 2.5V I/O (SSTL_2 compatible) Commands entered on each positive CK edge DQS edge-aligned with data for READs; centeraligned with data for WRITEs Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Bidirectional data strobe (DQS) transmitted/received with data—i.e., source-synchronous data capture Differential clock inputs CK and CK# Four internal device banks for concurrent operation Programmable burst lengths: 2, 4, or 8 Auto precharge option Serial Presence Detect (SPD) with EEPROM Programmable READ CAS latency Auto Refresh and Self Refresh Modes 15.6µs (128MB), 7.8125µs (256MB and 512MB) maximum average periodic refresh interval Gold edge contacts MT8VDDT1664HD – 128MB MT8VDDT3264HD – 256MB MT8VDDT6464HD – 512MB For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds Figure 1: 200-Pin SODIMM (MO-224) OPTIONS Package 200-pin SODIMM (Standard) 200-pin SODIMM (Lead-free)1 Frequency/CAS Latency2 6ns/166 MHz (333MT/s) CL=2.5 7.5ns/133 MHz (266 MT/s) CL = 2 7.5ns/133 MHz (266 MT/s) C...




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