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K1359 Dataheets PDF



Part Number K1359
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SK1359
Datasheet K1359 DatasheetK1359 Datasheet (PDF)

2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) .5 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode www.DataSheet4U.com Unit: mm : RDS (ON) = 3.0 Ω (typ.) : |Yfs| = 2.0 S (typ.) : IDSS = 300 μA (max) (VDS = 800 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RG.

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2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) .5 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode www.DataSheet4U.com Unit: mm : RDS (ON) = 3.0 Ω (typ.) : |Yfs| = 2.0 S (typ.) : IDSS = 300 μA (max) (VDS = 800 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 1000 1000 ±30 5 15 125 150 −55~150 Unit V V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC JEITA TOSHIBA ― ― 2-16C1B Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 1.0 50 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-09 2SK1359 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance www.DataSheet4U.com Output capacitance Rise time Turn−on time Switching time Fall time tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 4 A — 12 — Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = 25 V, VGS = 0V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V VDS = 800 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 2 A VDS = 20 V, ID = 2 A Min — — 1000 1.5 — 1.0 — — — — — Typ. — — — — 3.0 2.0 700 55 100 18 30 Max ±50 300 — 3.5 3.8 — — — — — — ns pF Unit nA μA V V Ω S Turn−off time Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) charge — — — — 70 60 35 25 — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Symbol IDR IDRP VDSF IDR = 4 A, VGS = 0 V Test Condition — — Min — — — Typ. — — — Max 5 15 −1.9 Unit A A V Marking K1359 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SK1359 www.DataSheet4U.com 3 2006-11-09 2SK1359 www.DataSheet4U.com 4 2006-11-09 2SK1359 www.DataSheet4U.com 5 2006-11-09 2SK1359 www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all .


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