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2SK1359. K1359 Datasheet

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2SK1359. K1359 Datasheet
















K1359 2SK1359. Datasheet pdf. Equivalent













Part

K1359

Description

2SK1359



Feature


2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) .5 2SK1359 DC−DC Converter and Mot or Drive Applications z Low drain−sou rce ON resistance z High forward transf er admittance z Low leakage current z E nhancement mode www.DataSheet4U.com Un it: mm : RDS (ON) = 3.0 Ω (typ.) : | Yfs| = 2.0 S (typ.) : IDSS = 300 μA ( max) (VDS = 800 V) : Vth = 1.
Manufacture

Toshiba Semiconductor

Datasheet
Download K1359 Datasheet


Toshiba Semiconductor K1359

K1359; .5~3.5 V (VDS = 10 V, ID = 1 mA) Absolu te Maximum Ratings (Ta = 25°C) Charact eristics Drain−source voltage Drain gate voltage (RGS = 20 kΩ) Gate−so urce voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tst g Rating 1000 1000 ±30 5 15 125 150 55~150 Unit V V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC J EITA TOSHIBA ― ― 2-16C1B Pulse.


Toshiba Semiconductor K1359

(Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage tem perature range Weight: 4.6 g (typ.) N ote: Using continuously under heavy loa ds (e.g. the application of high temper ature/current/voltage and the significa nt change in temperature, etc.) may cau se this product to decrease in the reli ability significantly even if the opera ting conditions (i..


Toshiba Semiconductor K1359

e. operating temperature/current/voltage , etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions”/Derating Conce pt and Methods) and individual reliabil ity data (i.e. reliability test report and estimated failure rate, etc). Ther mal Characteristics Ch.





Part

K1359

Description

2SK1359



Feature


2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) .5 2SK1359 DC−DC Converter and Mot or Drive Applications z Low drain−sou rce ON resistance z High forward transf er admittance z Low leakage current z E nhancement mode www.DataSheet4U.com Un it: mm : RDS (ON) = 3.0 Ω (typ.) : | Yfs| = 2.0 S (typ.) : IDSS = 300 μA ( max) (VDS = 800 V) : Vth = 1.
Manufacture

Toshiba Semiconductor

Datasheet
Download K1359 Datasheet




 K1359
2SK1359
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1359
DCDC Converter and Motor Drive Applications
z Low drainsource ON resistance : RDS (ON) = 3.0 (typ.)
z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
z Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
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Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
1000
1000
±30
5
15
125
150
55~150
V
V
V
A
W
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.0 °C / W
50 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-09




 K1359
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
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Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
VDS = 800 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2 A
VDS = 20 V, ID = 2 A
VDS = 25 V, VGS = 0V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 4 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
IDR = 4 A, VGS = 0 V
Marking
2SK1359
Min Typ. Max Unit
1000
1.5
1.0
3.0
2.0
700
55
100
±50
300
3.5
3.8
nA
μA
V
V
S
pF
— 18 —
— 30 —
ns
— 12 —
— 70 —
— 60 —
— 35 — nC
— 25 —
Min Typ. Max Unit
—— 5 A
— — 15 A
— — 1.9 V
K1359
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-09




 K1359
www.DataSheet4U.com
2SK1359
3 2006-11-09




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