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MRF3866R1

Microsemi Corporation

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROW...


Microsemi Corporation

MRF3866R1

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Description
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features www.DataSheet4U.com Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.5 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.0 8 Watts mW/ ºC MSC1312.PDF 10-25-99 MRF3866, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) www.DataSheet4U.com STATIC (off) Symbol BVCER BVCBO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0, rbe = 10 Ohms) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) 55 55 3.5 - Value Typ. Max. .02 Unit Vdc Vdc Vdc mA (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) 5.0 10 250 200 DYNAMIC Symbol COB Ftau Test Conditions Min. Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) C...




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