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MRF390

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

MRF390 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF390 is a Common Emitter Device Designed for Class A , w...


Advanced Semiconductor

MRF390

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Description
MRF390 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF390 is a Common Emitter Device Designed for Class A , www.DataSheet4U.com AB and C Amplifier Applications in the 100 - 500 MHz Military Communications Band. PACKAGE STYLE .400 8L FLG C D B A 2 G F E .19 25 .125 1 1 2 F U LL R O 2 3 H I J 3 2 4 x .0 60 R FEATURES INCLUDE: Gold Metalization Emitter Ballasting Input Matching K N L M D IM A B M IN IM UM inche s / m m M A X IM U M inche s / m m .030 / 0.76 .115 / 2.92 .360 / 9.14 .065 / 1.65 .130 / 3.30 .380 / 9.65 .735 / 18 .6 7 .645 / 16 .3 8 .895 / 22 .7 3 .420 / 10 .6 7 .003 / 0.08 .120 / 3.05 .159 / 4.04 .395 / 10 .0 3 .390 / 9.91 .765 / 19 .4 3 .655 / 16 .6 4 .905 / 22 .9 9 .430 / 10 .9 2 .007 / 0.18 .130 / 3.30 .175 / 4.45 .280 / 7.11 .405 / 10 .2 9 .075 / 1.91 .125 / 3.18 MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC O O C D E F G H I J K L M N O 7.0 A 60 V 140 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 1.25 C/W O O O O 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO Cob hFE Pg ηc TC = 25 C O TEST CONDITIONS IC = 100 mA IC = 100 mA IE = 10 mA VCB = 28 V VCE = 5.0 V VCE = 28 V IC = 1.0 A Pout = 50 W f = 500 MHz f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 30 60 4.0 52 10 7.5 8.5 55 UNITS V V V pF --dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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