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PARALLEL E2PROM. CAT28C010 Datasheet

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PARALLEL E2PROM. CAT28C010 Datasheet
















CAT28C010 E2PROM. Datasheet pdf. Equivalent













Part

CAT28C010

Description

1024K-Bit CMOS PARALLEL E2PROM



Feature


Advanced Information CAT28C010 1024K-Bi t CMOS PARALLEL E2PROM FEATURES s Fast Read Access Times: 120 ns s Single 5V 128K x 8 s Automatic Page Write Operati on: ± 10% Supply s Low Power CMOS Di ssipation: –1 to 128 Bytes in 5ms Page Load Timer s End of Write Detecti on: –Active: 40 mA Max. –Standby: 200 µA Max. www.DataSheet4U.com s Sim ple Write Operation: –Toggl.
Manufacture

Catalyst Semiconductor

Datasheet
Download CAT28C010 Datasheet


Catalyst Semiconductor CAT28C010

CAT28C010; e Bit –DATA Polling s Hardware and Sof tware Write Protection s 100,000 Progra m/Erase Cycles s 100 Year Data Retentio n s Commercial, Industrial and Automoti ve –On-Chip Address and Data Latches –Self-Timed Write Cycle with Auto-Cl ear s Fast Write Cycle Time: –5ms Ma x s CMOS and TTL Compatible I/O Temper ature Ranges DESCRIPTION The CAT28C010 is a fast,low power, 5V-o.


Catalyst Semiconductor CAT28C010

nly CMOS parallel E2PROM organized as 12 8K x 8-bits. It requires a simple inter face for in-system programming. On-chip address and data latches, self-timed w rite cycle with auto-clear and VCC powe r up/down write protection eliminate ad ditional timing and protection hardware . DATA Polling and Toggle status bits s ignal the start and end of the self-tim ed write cycle. Ad.


Catalyst Semiconductor CAT28C010

ditionally, the CAT28C010 features hardw are and software write protection. The CAT28C010 is manufactured using Catalys t’s advanced CMOS floating gate techn ology. It is designed to endure 100,000 program/erase cycles and has a data re tention of 100 years. The device is ava ilable in JEDEC approved 32-pin DIP, PL CC, 32-pin TSOP and 40-pin TSOP package s. BLOCK DIAGRAM A7.





Part

CAT28C010

Description

1024K-Bit CMOS PARALLEL E2PROM



Feature


Advanced Information CAT28C010 1024K-Bi t CMOS PARALLEL E2PROM FEATURES s Fast Read Access Times: 120 ns s Single 5V 128K x 8 s Automatic Page Write Operati on: ± 10% Supply s Low Power CMOS Di ssipation: –1 to 128 Bytes in 5ms Page Load Timer s End of Write Detecti on: –Active: 40 mA Max. –Standby: 200 µA Max. www.DataSheet4U.com s Sim ple Write Operation: –Toggl.
Manufacture

Catalyst Semiconductor

Datasheet
Download CAT28C010 Datasheet




 CAT28C010
Advanced Information
CAT28C010
1024K-Bit CMOS PARALLEL E2PROM
128K x 8
FEATURES
s Fast Read Access Times: 120 ns
s Single 5V ± 10% Supply
s Low Power CMOS Dissipation:
–Active: 40 mA Max.
–Standby: 200 µA Max.
www.DataSheet4sU.cSomimple Write Operation:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
s Fast Write Cycle Time:
–5ms Max
s CMOS and TTL Compatible I/O
DESCRIPTION
The CAT28C010 is a fast,low power, 5V-only CMOS
parallel E2PROM organized as 128K x 8-bits. It requires
a simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and VCC power up/down write protection
eliminate additional timing and protection hardware.
DATA Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28C010 features hardware and software write pro-
tection.
s Automatic Page Write Operation:
–1 to 128 Bytes in 5ms
–Page Load Timer
s End of Write Detection:
–Toggle Bit
DATA Polling
s Hardware and Software Write Protection
s 100,000 Program/Erase Cycles
s 100 Year Data Retention
s Commercial, Industrial and Automotive
Temperature Ranges
The CAT28C010 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 32-pin DIP, PLCC, 32-pin TSOP and 40-pin
TSOP packages.
BLOCK DIAGRAM
A7–A16
VCC
CE
OE
WE
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
CONTROL
A0–A6
TIMER
ADDR. BUFFER
& LATCHES
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
131,072 x 8
E2PROM
ARRAY
128 BYTE PAGE
REGISTER
I/O BUFFERS
I/O0–I/O7
5096 FHD F02
© 1999 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 25093-00 7/99 P-1




 CAT28C010
CAT28C010
Advanced Information
www.DataSheet4U.com
PIN CONFIGURATION
DIP Package (P)
PLCC Package (N)
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
4 3 2 1 32 31 30
A7 5
29 A14
A6 6
28 A13
A5 7
27 A8
A4 8 CAT28C010 26 A9
A3 9
TOP VIEW
25 A11
A2 10
24 OE
A1 11
A0 12
23 A10
22 CE
I/O0 13
21 I/O7
14 15 16 17 18 19 20
5096 FHD F01
TSOP Package (10mm X 14mm) (T14)
A11
A9
A8
A13
A14
NC
NC
NC
WE
VCC
NC
NC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
CAT28C010
TOP VIEW
40 OE
39 A10
38 CE
37 I/O7
36 I/O6
35 I/O5
34 I/O4
33 I/O3
32 NC
31 NC
30 VSS
29 NC
28 NC
27 I/O2
26 I/O1
25 I/O0
24 A0
23 A1
22 A2
21 A3
TSOP Package (8mmx20mm) (T)
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CAT28C010
TOP VIEW
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 Vss
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
PIN FUNCTIONS
Pin Name
A0–A16
Function
Address Inputs
Pin Name
WE
I/O0–I/O7
CE
OE
Data Inputs/Outputs
Chip Enable
Output Enable
VCC
VSS
NC
Function
Write Enable
5V Supply
Ground
No Connect
Doc. No. 25093-00 7/99 P-1
2




 CAT28C010
Advanced Information
CAT28C010
ABSOLUTE MAXIMUM RATINGS*
*COMMENT
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(3) ........................ 100 mA
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
www.DataSheet4RUE.cLoImABILITY CHARACTERISTICS
Symbol
NEND(1)
TDR(1)
VZAP(1)
ILTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
104 or 105
100
2000
100
Max.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
VCC = 5V ±10%, unless otherwise specified.
Limits
Symbol
ICC
Parameter
VCC Current (Operating, TTL)
Min. Typ.
Max.
40
Units
mA
Test Conditions
CE = OE = VIL, f=6MHz
All I/O’s Open
ICCC(5)
VCC Current (Operating, CMOS)
25 mA CE = OE = VILC, f=6MHz
All I/O’s Open
ISB
ISBC(6)
VCC Current (Standby, TTL)
VCC Current (Standby, CMOS)
3 mA CE = VIH, All I/O’s Open
200 µA CE = VIHC,
All I/O’s Open
ILI Input Leakage Current
-10
10 µA VIN = GND to VCC
ILO Output Leakage Current
-10
10 µA VOUT = GND to VCC,
CE = VIH
VIH(6)
High Level Input Voltage
2
VCC +0.3 V
VIL(5)
Low Level Input Voltage
-1
0.8 V
VOH High Level Output Voltage
2.4
V IOH = –400µA
VOL Low Level Output Voltage
0.4 V IOL = 2.1mA
VWI Write Inhibit Voltage
3.5
V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.
(5) VILC = –0.3V to +0.3V.
(6) VIHC = VCC –0.3V to VCC +0.3V.
3 Doc. No. 25093-00 7/99 P-1




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