STJ004SF

Semiconductor STJ004SF P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features Low VGS(th) : VGS(th)=-0.7~-1.4V Small footprint due to small package Low RDS (ON) : RDS (ON)= 61mΩ (Typ.) www.DataSheet4U.com Ordering Information Type NO. STJ004SF Marking J04 Package Code SOT-23F Outline Dimensions unit : mm 2.30~2.50 1.50~1.70 1 2.80~3.00 1.90 Typ. 3 0.45 Max. Block Diagram D 2 G 0.80~1.00 0.10 Max. 0.20 Max. S ㅋ PIN 1. 2. 3. Connections Gate Source Drain KSD-T5C045-000 1 STJ004SF Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) ** * ** (Ta=25°C) Symbol VDSS VGSS ID IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating -30 ±12 -2.4 -9.6 0.35 -2.4 13 -2.4 1.1 150 -55~150 Unit V V A A W A mJ A mJ °C Drain current (Pulsed) www.DataSheet4U.com Total Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) ** Typ. - Max 357 Unit ℃/W KSD-T5C045-000 2 STJ004SF P-CH Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse...