STJ009

Semiconductor STJ009 P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features Low VGS(th) : VGS(th)=1.0~3.0V Small footprint due to small package Low RDS (ON) : RDS (ON) =66mΩ www.DataSheet4U.com Ordering Information Type NO. STJ009 Marking STJ009 Package Code SOP-8 Outline Dimensions 5.88~6.18 3.70~3.90 0.27 Max. 0.52 Max. unit : mm 3.81 Typ. 0.27 Max. 0.46 Min. Block Diagram PIN Connections 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain KSD-T7F003-000 1.24~1.44 1.27 Typ. 4.81~5.01 1 STJ009 Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) Total Power www.DataSheet4U.com * ** (Ta=25°C) Symbol VDSS VGSS ID IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating -30 ±20 -5.3 -21.2 2.0 -5.3 33 -5.3 1.6 150 -55~150 Unit V V A A W A mJ A mJ °C dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) Typ. 62.5 Max - Unit ℃/W KSD-T7F003-000 2 STJ009 Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance www.DataSheet4U.com Forward transfer conductance ...