P-Channel Enhancement-Mode MOSFET
Semiconductor
STJ828EF
P-Channel Enhancement-Mode MOSFET
Description
• High speed switching application. • Analog swit...
Description
Semiconductor
STJ828EF
P-Channel Enhancement-Mode MOSFET
Description
High speed switching application. Analog switch application.
Features
-2.5V Gate drive. Low threshold voltage : Vth = -0.5~ -1.5V. www.DataSheet4U.com High speed.
Ordering Information
Type NO. STJ828EF Marking J8 Package Code SOT-523F
Outline Dimensions
unit : mm
1.60±0.1 0.88±0.1
1
1.60±0.1 1.00±0.1
3 2
0.25~0.30
+0.1 0.68 -0.05
0~0.1
1.11±0.05
PIN Connections 1. Gate 2. Source 3. Drain
1 KST-4014-000
STJ828EF
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range
www.DataSheet4U.com
(Ta=25°C)
Symbol
VDS VGSS ID PD Tch Tstg
Ratings
-20 ±7 -50 150 150 -55~150
Unit
V V mA mW °C °C
Electrical Characteristics
Characteristic
Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time
(Ta=25°C)
Symbol
BVDSS Vth IDSS IGSS RDS(ON) |Yfs| Ciss Coss Crss tON tOFF
Test Condition
ID=-100µA, VGS=0 ID=-0.1mA, VDS=-3V VDS=-20V, VGS=0 VGS=±7V, VDS=0 VGS=-2.5V, ID=-10mA VDS=-3V, ID=-10mA VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V
Min. Typ. Max.
-20 -0.5 -1.5 -1 ±1 40 15 10.4 8.4 2.8 0.15 0.13
Unit
V V µA µA Ω mS...
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