M25JZ51

SM25GZ51,SM25JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current l High Commutating (dv / dt) l Isolation Voltage www.DataSheet4U.com Unit: mm : IT (RMS) = 25A : (dv / dt) c = 10V / µs : VIsol = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage SM25GZ51 SM25JZ51 SYMBOL VDRM IT (RMS) ITSM I t (Note 1) di / dt PGM PG (AV) VGM IGM Tj Tstg VIsol 2 RATING 400 600 25 230 (50Hz) 253 (60Hz) 260 50 5 0.5 10 2 −40~125 −40~125 1500 UNIT V A A A s A / µs W W V A °C °C V 2 R.M.S On−State Current (Full Sine Waveform Tc = 73°C) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.) 2 JEDEC JEITA TOSHIBA Weight: 5.9g ― ― 13−16A1A Note 1: di / dt Test Condition VDRM = 0.5 × Rated ITM ≤ 40A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 1 2001-07-13 SM25GZ51,SM25JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage www.DataSheet4U.com Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage ...