AP730P

AP730P Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching www.DataSheet4U.com ▼ Simple N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G D S 400V 1.0Ω 5.5A Drive Requirement TO-220 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 400 ± 30 5.5 3.5 23 74 0.59 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 260 5.5 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.7 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200219032 AP730P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Param...