DatasheetsPDF.com

POWER MOSFET. AP730P Datasheet

DatasheetsPDF.com

POWER MOSFET. AP730P Datasheet
















AP730P MOSFET. Datasheet pdf. Equivalent













Part

AP730P

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP730P Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitiv e Avalanche Rated ▼ Fast Switching ww w.DataSheet4U.com ▼ Simple N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS R DS(ON) ID G D S 400V 1.0Ω 5.5A Drive Requirement TO-220 Description The A dvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching , rugged.
Manufacture

Advanced Power Electronics

Datasheet
Download AP730P Datasheet


Advanced Power Electronics AP730P

AP730P; ized device design , low on-resistance a nd cost-effectiveness. The TO-220 packa ge is universally preferred for all com mercial-industrial applications. The de vice is suited for switch mode power su pplies ,DCAC converters and high curren t high speed switching circuits. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC= 25℃ EAS IAR EAR TSTG T.


Advanced Power Electronics AP730P

J Parameter Drain-Source Voltage Gate-So urce Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 4 00 ± 30 5.5 3.5 23 74 0.59 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Fact or Single Pulse Avalanche Energy Avalan che Current Repetitive Avalanche Energy Storage Temperature Rang.


Advanced Power Electronics AP730P

e Operating Junction Temperature Range 260 5.5 7 -55 to 150 -55 to 150 Therma l Data Symbol Rthj-c Rthj-a Parameter T hermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.7 62 Unit ℃/W ℃/W Data & s pecifications subject to change without notice 200219032 AP730P Electrical C haracteristics@Tj=25oC(unless otherwise specified) Symbol BVD.





Part

AP730P

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP730P Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitiv e Avalanche Rated ▼ Fast Switching ww w.DataSheet4U.com ▼ Simple N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS R DS(ON) ID G D S 400V 1.0Ω 5.5A Drive Requirement TO-220 Description The A dvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching , rugged.
Manufacture

Advanced Power Electronics

Datasheet
Download AP730P Datasheet




 AP730P
Advanced Power
Electronics Corp.
AP730P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
www.DataSheet4U.cSomimple Drive Requirement
Description
G
DS
TO-220
BVDSS
RDS(ON)
ID
400V
1.0Ω
5.5A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching ,
ruggedized device design , low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-
AC converters and high current high speed switching circuits.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
400
± 30
5.5
3.5
23
74
0.59
260
5.5
7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Max.
Max.
Value
1.7
62
Unit
/W
/W
Data & specifications subject to change without notice
200219032




 AP730P
AP730P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
www.DataShgefes t4U.com
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=2.75A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
VDS=10V, ID=2.75A
VDS=400V, VGS=0V
VDS=320V, VGS=0V
VGS= ± 30V
ID=5.5A
VDS=320V
VGS=10V
VDD=200V
ID=5.5A
RG=10Ω,VGS=10V
RD=36Ω
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
400 - - V
- 0.36 - V/
- - 1Ω
2 - 4V
- 30 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 35 - nC
- 3.7 - nC
- 20 - nC
- 8 - ns
- 20 - ns
- 47 - ns
- 18 - ns
- 565 - pF
- 70 - pF
- 38 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=5.5A, VGS=0V
Min. Typ. Max. Units
- - 5.5 A
- - 23 A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=5.5A.
3.Pulse width <300us , duty cycle <2%.




 AP730P
AP730P
7
T C =25 o C
6
www.DataSheet4U.com5
4
V G =10V
V G =7.0V
V G =6.0V
3
V G =5.0V
2
1
V G =4.0V
0
0 2 4 6 8 10 12 14
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
T C =150 o C
3
2
V G =10V
V G =7.0V
V G =6.0V
V G =5.0V
1
V G =4.0V
0
0 2 4 6 8 10 12 14
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
3
I D =2.75A
2.5 V G =10V
2
1.5
1
0.5
0
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature




Recommended third-party AP730P Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)