2SK2800
2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
www.DataSh...
Description
2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
www.DataSheet4U.com
Low on-resistance R DS(on) = 15 mΩ typ. High speed switching Low drive current 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain (Flange) 3. Source
2SK2800
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.DataSheet4U.com Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note 3 Note 3 Note 2 Note1
Ratings 60 ±20 40 160 40 40 137 50 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2800
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60 ±20 — — 1.5 — — 20 — — — — — — — — — Typ — — — — — 15 25 35 1500 720 200 20 180 200 200 0.95 70 Max — — ±10 10 2.5 20 40 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V I F = 40A, VGS = 0 I F = 40A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 20A, VGS = 10V Note4 I D = 20A, VGS = 4V Note4 I D = 20A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 20A, RL = 1.5Ω VGS = 10V Drain to source breakdown voltage V(BR)DS...
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