STW20NM50FD
N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh™ Power MOSFET (with FAST DIODE)
TYPE STW20NM50FD
www.DataSheet4U.com s TYPICA...
Description
N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh™ Power MOSFET (with FAST DIODE)
TYPE STW20NM50FD
www.DataSheet4U.com s TYPICAL
s s s s s
STW20NM50FD
VDSS 500V
RDS(on) <0.25Ω
ID 20 A
RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
3 2 1
TO-247
DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters. APPLICATIONS s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 20 14 80 214 1.42 20 –65 to 150 150
(1)ISD ≤ 20A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maximum temperature allowed
Unit V V V A A A W W/°C V/ns °C °C
()Pulse width limited by safe operating area
June 2002
1/8
STW20NM50FD
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case The...
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