W20NM50

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20A TO-247 MDmesh™ MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STW20NM50 550V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES t(s) 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE uc CHARGE d LOW GATE INPUT RESISTANCE ro TIGHT PROCESS CONTROL AND HIGH P MANUFACTURING YIELDS te DESCRIPTION le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout. The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent - avalanche characteristics. The adoption of the ) Company’s proprietary strip technique yields overall t(s dynamic performance that is significantly better than that of similar competition’s products. duc APPLICATIONS ro The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing P system miniaturization and higher efficiencies. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM Obsolete ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20 A ID Drain Current (continuous) at TC = 100°C 12.6 A IDM ( ) Drain Current (pulsed) 80 A PTOT Total Dissipation at TC = 25°C 214 W Derating Factor 1.44 W/°C dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature ()Pulse width limited by sa...