DatasheetsPDF.com

Voltage Regulator. CM3131 Datasheet

DatasheetsPDF.com

Voltage Regulator. CM3131 Datasheet
















CM3131 Regulator. Datasheet pdf. Equivalent













Part

CM3131

Description

Triple Linear Voltage Regulator



Feature


CM3131 Triple Linear Voltage Regulator f or DDR-I/-II Memory Features Integrated power solution for DDR-I and DDR-II me mory systems with few external componen ts • Three all-linear regulators for VDDQ, VTT and VSTBY power supply applic ations • Lowest system cost and small est footprint for DDR power solutions VDDQ regulator/driver utilizes exter nal N-FET to www.DataShe.
Manufacture

California Micro Devices

Datasheet
Download CM3131 Datasheet


California Micro Devices CM3131

CM3131; et4U.com provide up to 15A current at 2. 5V/1.8V • VTT source/sink regulator p rovides up to 2A at 1.25V for DDR-I sys tems or 0.65A at 0.9V for the DDR-II me mory controller (not DDR-II memory) • LDO standby regulator provides up to 5 00mA at 2.5V for DDR-I and at 1.8V for DDR-II systems • Can be ganged for hi gher current applications • Over temp erature and reverse curren.


California Micro Devices CM3131

t protection • Over current protection for VSTBY and VTT regulator • Availa ble in 8 lead and 14 lead PSOP packages • Lead-free versions available • Product Description The CM3131 family o f all-linear regulators provides an int egrated power solution for DDR-I/-II me mory systems in both run-time and stand by modes of operation. The CM3131 is id eal for designs incorporat.


California Micro Devices CM3131

ing both a main 3.3V and a standby (3.3V or 5V) supply. The CM3131 features thr ee independent linear regulators for VD DQ, VTT and VSTBY supply regulation and will maintain an accuracy of ±1% acro ss the operating temperature range. The CM3131 is offered in two configuration s. The CM3131-01/11 drives a single ext ernal N-FET on a single VDDQ rail. The CM3131-02 drives tw.





Part

CM3131

Description

Triple Linear Voltage Regulator



Feature


CM3131 Triple Linear Voltage Regulator f or DDR-I/-II Memory Features Integrated power solution for DDR-I and DDR-II me mory systems with few external componen ts • Three all-linear regulators for VDDQ, VTT and VSTBY power supply applic ations • Lowest system cost and small est footprint for DDR power solutions VDDQ regulator/driver utilizes exter nal N-FET to www.DataShe.
Manufacture

California Micro Devices

Datasheet
Download CM3131 Datasheet




 CM3131
CM3131
Triple Linear Voltage Regulator for DDR-I/-II Memory
Features
Integrated power solution for DDR-I and DDR-II
memory systems with few external components
Three all-linear regulators for VDDQ, VTT and
VSTBY power supply applications
Lowest system cost and smallest footprint for
DDR power solutions
www.DataSheet4U.cVoDmDQ regulator/driver utilizes external N-FET to
provide up to 15A current at 2.5V/1.8V
VTT source/sink regulator provides up to 2A at
1.25V for DDR-I systems or 0.65A at 0.9V for
the DDR-II memory controller (not DDR-II
memory)
LDO standby regulator provides up to 500mA at
2.5V for DDR-I and at 1.8V for DDR-II systems
Can be ganged for higher current applications
Over temperature and reverse current protection
Over current protection for VSTBY and VTT
regulator
Available in 8 lead and 14 lead PSOP packages
Lead-free versions available
Applications
Desktop PCs, notebooks, and workstations
Set top boxes, digital TVs, printers
Embedded systems
Product Description
The CM3131 family of all-linear regulators provides
an integrated power solution for DDR-I/-II memory
systems in both run-time and standby modes of
operation. The CM3131 is ideal for designs
incorporating both a main 3.3V and a standby (3.3V
or 5V) supply. The CM3131 features three
independent linear regulators for VDDQ, VTT and VSTBY
supply regulation and will maintain an accuracy of
±1% across the operating temperature range.
The CM3131 is offered in two configurations. The
CM3131-01/11 drives a single external N-FET on a
single VDDQ rail. The CM3131-02 drives two external
unmatched N-FETs on two VDDQ rails. Each VDDQ rail
incorporates an adjustment pin (SENSE) to enable
setting VDDQ in the 2.2V to 2.8V range, supporting
DIMMs with different supply requirements or DDR-II
type devices.
The CM3131-01/11 is available in 8-lead PSOP
package and the CM3131-02 is available in 14-lead
PSOP package.
The CM3131 devices are also available with optional
lead-free finishing.
Electrical Schematic
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
1




 CM3131
CM3131
PACKAGE / PINOUT DIAGRAM
V DDQ
VTT
GND
TOP VIEW
CM3131-01/11
www.DataSheet4U.com
SEL/EN
PSOP-8
Note: These drawings are not to scale.
DRIVE
VSTBY
VCC
SENSE
NC
GND
SEL
NC
SENSE1
VCC
EN
TOP VIEW
CM3131-02
PSOP-14
VTT
VDDQ1
VDDQ2
SENSE2
DRIVE2
DRIVE1
VSTBY
PART NUMBER
-01 -11 -02
1 1 13
2 2 14
1
332
43
4
47
555
666
778
889
10
11
12
PIN DESCRIPTIONS
NAME
VDDQ / VDDQ1
VTT
NC
GND
SEL
NC
EN
SENSE / SENSE1
VCC
VSTBY
DRIVE / DRIVE1
DRIVE2
SENSE2
VDDQ 2
DESCRIPTION
VDDQ input for VREF and VDDQ Output in Standby
VTT Output for termination resistors
No connection
Ground
Select Input, active low
No connection
Enable Input, active high
Sense Input, Adjusts VDDQ Rail
3.3V Main Input Supply
3.3V or 5V Standby Input Supply
Drive Output for VDDQ External n-FET
Drive Output for VDDQ External n-FET
Sense Input, Adjusts VDDQ Rail
VDDQ Input for VREF and VDDQ Output in Standby
Ordering Information
PART NUMBERING INFORMATION
STANDARD FINISH
LEAD-FREE FINISH
PINS
8
8
14
PACKAGE
PSOP-8
PSOP-8
PSOP-14
ORDERING PART
NUMBER1
CM3131-01SB
CM3131-11SB
CM3131-02SB
PART
MARKETING
CM3131-01SB
CM3131-11SB
CM3131-02SB
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
ORDERING
PART NUMBER1
CM3131-01SH
CM3131-11SH
CM3131-02SH
PART
MARKING
CM3131-01SH
CM3131-11SH
CM3131-02SH
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
2




 CM3131
CM3131
Functional Description
The CM3131-01 / -11 and CM3131-02 provide
power for DDR-I/DDR-II memories from three
voltage regulators on-chip with either one or two
external N-FETs respectively. There is an over-
temperature thermal shutdown if any of the
regulators overheat. Each regulator has reverse
current protection in the event of any being shut
down.
www.DataSheeTt4hUe.cloinmear regulator-driver/s with external N-FET/s
can provide up to 15A at 2.5V/1.8V for the VDDQ of
DDR-I/-II memory, from an input supply voltage of
2.8V-3.6V. An external feedback resistor divider,
connected to the SENSE1 pin, enables selection of
VDDQ output voltages from 2.2V to 2.8V for use with
DDR-I memories requiring other than 2.5V for VDDQ.
VDDQ = 1.25V x (R1+R2)/R2. When SENSE1 is
connected to GND or left open, VDDQ is fixed at
2.50V (and VTT at 1.25V). For DDR-II operation,
VDDQ can be set from 1.7V to 1.9V.
The VTT regulator is a linear source-sink regulator
powered from the VDDQ output that supplies the VTT
supply required by DDR-I memory termination
resistors. This regulator sinks or sources up to 2A at
1.25V to or from the DDR-I bus termination resistors.
For DDR-II applications, the regulator sinks or
sources 0.65A at 0.9V. The VTT output voltage
accurately tracks VDDQ/2 to 1%. When there is no
VCC provided, VTT is powered down and its output is
0V. This regulator has overload current limiting of
2.5A.
The standby regulator is a LDO regulator that is
powered from a standby voltage, VSTBY, of 3.3V or
5V, and supplies a regulated output of up to 500mA
to the VDDQ of the DDR memory to enable it to retain
its contents during the standby mode. It provides
2.5V for DDR-I and 1.8V for DDR-II.
The CM3131-01 and CM3131-11 differ with regards
the selection of truth table for determining which S0-
S5 sequencing matrix the chip is set for. The
CM3131-02 has both EN and SEL pins to more
accurately define each Sx stage without monitoring
the VCC or VSTBY voltages.
Two CM3131s can be ganged together to provide
VDDQ power to dual channels of DDR memory, and
the memory controller chip of any chip set.
PSOP-8
2.8V / 3.0V / 3.3V for DDR-I,
2.2V /2.5V / 3.3V for DDR-II
VCC
CM3131-01/11
VDDQ
LDO Drive
DRIVE
FET
Internal VSBY voltage
doubler ensures VG > 5.3V
Drives any N-FET with CGS
<1200pF
5VSTBY / 3.3VSTBY
SEL / EN
CSBY
CCC
VDDQ
LDO
VDDQ
VDDQ / VTT
Control
R1
SENSE
VDDQ
Linear
Source-Sink
VTT Reg
R2
GND
VTT
GND
CTT
VDDQ
CDDQ
VTT
Only needed for
DDR-I if VDDQ is
not 2.5V, e.g. 2.6V
or 2.7V.
Set to 1.7V to
1.9V for DDR-II
2.8V / 3.0V / 3.3V for DDR-I,
2.2V /2.5V / 3.3V for DDR-II
VCC
CM3131-02
VDDQ
LDO Drives
DRIVE1
DRIVE2
N-FET1
5VSTBY / 3.3VSTBY
SEL
EN
CSBY
CCC
VDDQ
LDOs
VDDQ1
VDDQ2
VDDQ / VTT
Control
R1 R3
SENSE1
CDDQ2
SENSE2
VDDQ
R2 R4
Linear
Source-Sink
VTT Reg
VTT
GND
GND
CTT
N-FET2
VDDQ1
VDDQ2
CDDQ1
VTT
Examples of Single and Dual N-FET Drive Configurations
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
3




Recommended third-party CM3131 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)