Transistors
2SD1992A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB1321A I ...
Transistors
2SD1992A
Silicon
NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB1321A I Features
Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping
6.9±0.1
0.15
0.7
4.0
1.05 2.5±0.1 (1.45) ±0.05 0.8
0.65 max.
1.0
0.45−0.05
+0.1
I Absolute Maximum Ratings Ta = 25°C www.DataSheet4U.com
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 7 1 500 600 150 −55 to +150 Unit V V V A mA mW °C °C
1
2
3
0.45−0.05
2.5±0.5
2.5±0.5
+0.1
Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1: Emitter 2: Collector 3: Base MT1 Type Package
1.2±0.1 0.65 max.
0.1 0.45+ − 0.05
2.5±0.1
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 No-rank 85 to 340 VCBO VCEO VEBO hFE1 *2 hFE2 *1 VCE(sat) fT Cob Conditions VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 I...
