CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2098LN3
Spec. No. : C850N3 Issued Date : 2004.0...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD2098LN3
Spec. No. : C850N3 Issued Date : 2004.01.28 Revised Date :2017.10.11 Page No. : 1/7
Features
Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386LN3 Pb-free lead plating and halogen-free package
Symbol
BTD2098LN3
Outline
SOT-23 C
B:Base C:Collector E:Emitter
E B
Ordering Information
Device
Package
BTD2098LN3-0-T1-G
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products Product name
BTD2098LN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C850N3 Issued Date : 2004.01.28 Revised Date :2017.10.11 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
ICP
Power Dissipation
PD
Thermal Resistance, junction to ambient
RθJA
Thermal Resistance, Junction to Case
RθJC
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1.Single Pulse Pw≦350μs, Duty≦2%.
2.When mounted on a ceramic board with area of 600mm²×0.8mm
Limits
25 15 6 5 8 (Note 1) 0.9 (Note 2) 138 100 150 -55~+150
Unit
V V V A...