BTD2098N3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 1/4 BTD2098N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics www.DataSheet4U.com Complementary to BTB1386N3 Symbol BTD2098N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single Pulse Pw≦350µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limits 40 20 7 5 8 (Note ) 225 556 150 -55~+150 Unit V V V A A mW °C/W °C °C BTD2098N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) www.DataSheet4U.com *hFE1 *hFE2 fT Cob Min. 20 7 230 150 Typ. 0.35 150 Max. 0.1 1 0.1 1.0 800 50 Unit V V µA µA µA V MHz pF Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 2/4 Test Conditions IC=1mA, IB=0 IE=10µA, IC=0 VCB=10V, IE=0 VCB=10V, IE=0 VEB=7V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2.00A VCE=6V, IE=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE1 Rank Range Q 230~380 R 340~600 S 400~800 BTD2098N3 CYStek Product Specif...