CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2118LJ3
Spec. No. : C850J3 Issued Date : 2004.0...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD2118LJ3
Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 1/5
Features
Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1412LJ3 Pb-free package
Symbol
BTD2118LJ3
Outline
TO-252
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
Junction Temperature Storage Temperature
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
Symbol VCBO VCEO VEBO
IC ICP PD(TA=25℃)
PD(TC=25℃)
Tj Tstg
Limits 40 15 6 5 8 (Note 1) 1
10 150 -55~+150
Unit V V V A A W
W
°C °C
BTD2118LJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
15
-
BVEBO
6
-
ICBO - -
IEBO - -
*VCE(sat) - 0.25
*hFE1 180 -
*hFE2 160 -
fT - 150
Cob -
Max.
0.1 0.1 0.5 820 50
Unit
V V V µA µA V MHz pF
Test Conditions
IC=50µA, IB=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE1
Rank Range
R 180~390
S 270~560
T 390~820
Ordering Information
Devic...
