BTD2150AE3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 1/5 BTD2150AE3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 50mA Excellent current gain characteristics www.DataSheet4U.com Complementary to BTB1424AE3 Symbol BTD2150AE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Pulse test, pulse width≤380µs, duty cycle≤2%. Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits 80 50 6 3 7 (Note) 1 1.8 25 150 -55~+150 Unit V V V A A W °C °C BTD2150AE3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *V CE(sat) www.DataSheet4U.com *VBE(sat) *hFE fT Cob ton tstg tf Min. 80 50 6 180 Typ. 0.25 15 50 0.8 3 1.2 Max. 10 10 0.5 2 820 Unit V V V µA µA V V MHz pF µs µs µs Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 2/5 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=80V, IE=0 VEB=6V, IC=0 IC=2A, IB=50mA IC=2A, IB=200mA VCE=4V, IC=500mA VCE=12V, IC=200mA, f =10MHz VCB=10V, f=1MHz VCC=20V, IC=1A, IB1=15mA, IB2=-30mA,RL=20Ω *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE R...