CYStech Electronics Corp.
Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date :2014.09.23 Page No. : 1/7
Low Vces...
CYStech Electronics Corp.
Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date :2014.09.23 Page No. : 1/7
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD2150L3
BVCEO IC RCESAT (Max)
50V 3A 145mΩ
Features
Low VCE(sat), VCE(sat)= 0.22V (typical), at IC/IB=2A/0.2A Excellent current gain characteristics Complementary to BTB1424L3 Pb-free lead plating and halogen-free package
Symbol
BTD2150L3
Outline
SOT-223
B:Base C:Collector E:Emitter
Ordering Information
Device BTD2150L3-0-T3-X
Package
SOT-223 (Pb-free lead plating package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD2150L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date :2014.09.23 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current
Power Dissipation @TA=25℃ (Note)
VCBO VCEO VEBO
IC ICM IBM
PD
60 V 50 V 6V 3A 5A 1A
1.5 W
Power Dissipation @TC=25℃
PD 5 W
Operating Junction and Storage Temperature Range
Tj ; Tstg
-65~+150
°C
Note :The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 1 square centimet...